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Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes


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dc.contributor.author Elgazzar, Elsayed
dc.contributor.author Dere, Ayşegül
dc.contributor.author Özen, Furkan
dc.contributor.author Koran, Kenan
dc.contributor.author Al-sehemi, Abdullah G.
dc.contributor.author Al-ghamdi, Ahmed A.
dc.contributor.author Görgülü, Ahmet Orhan
dc.contributor.author El-tantawy, F.
dc.contributor.author Yakuphanoğlu, Fahrettin
dc.date.accessioned 2017-04-11T12:54:27Z
dc.date.available 2017-04-11T12:54:27Z
dc.date.issued 2017-03-19
dc.identifier.citation Elgazzar, E., Dere, A., Özen, F., Koran, K., Al-sehemi, A. ve diğerleri. (2017). Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes. Physica B, 515(1), 8-17. tr_TR
dc.identifier.uri http://hdl.handle.net/11508/9771
dc.description.abstract The present study introduces cyclotriphosphazene compounds substituted by dioxyphenylcoumarin as a photodiode application. Firstly, 7,8-dihydroxy-3-(3-methylphenyl)coumarin (1b) has been obtained by conventional as well as microwave assisted methods. Novel optoelectronic device characteristics for both mono and disubstituted dioxyphenylcoumarin bearing cyclotriphosphazene compounds (HCP-2 and HCP-4) have been synthesized from the reactions of cyclotriphosphazene containing dioxybiphenyl (HCP-1 and HCP-3) with compound 1b, respectively. The structures of compounds HCP 1–4 were identified by using elemental analysis, 1H, 13C-APT, 31P NMR and 2D HETCOR NMR and FT-IR spectroscopy methods. The Al/HCP-2/p-Si/Al and Al/HCP-4/-p-Si/Al photodiodes properties have been investigated from current-voltage (I−V) and capacitance-voltage (C−V) measurements. The electrical parameters of the prepared diodes such as ideality factor n and series resistance Rs were investigated in dark and at room temperature from (I−V) curve and Nord's method. As can be seen, the Al/HCP-2/p-Si/Al diode of high rectification ratio RR and with ideality factor greater than unity. The influence of light illuminations on the diode shows that the device can be used as photodiode with good efficiency. The barrier height ϕb and series resistance Rs have been calculated from the capacitance-voltage (C−V)and conductance-voltage (G−V) measurements under various applied frequencies from 10 kHz to 1 MHz. the high difference in the results of barrier height obtained from I-V and C-V calculations confirm the influence of series resistance and localized states on transport of charge carriers and the photodiode performance. tr_TR
dc.description.sponsorship TUBITAK-110T652 Fırat University, FÜBAP-FF.1619 tr_TR
dc.language.iso İngilizce tr_TR
dc.rights info:eu-repo/semantics/openAccess tr_TR
dc.subject Fırat Üniversitesi Kütüphanesi::DOĞA BİLİMLERİ VE MATEMATİK tr_TR
dc.subject Fırat Üniversitesi Kütüphanesi::TEKNOLOJİ tr_TR
dc.subject.ddc Photodiode, tr_TR
dc.subject.ddc Sensor, tr_TR
dc.subject.ddc Cyclotriphosphazene tr_TR
dc.subject.ddc Dioxycoumarin-phosphazene tr_TR
dc.title Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes tr_TR
dc.type Makale - Bilimsel Dergi Makalesi - Çok Yazarlı tr_TR
dc.contributor.YOKID TR246764 tr_TR
dc.contributor.YOKID TR245640 tr_TR
dc.contributor.YOKID TR59911 tr_TR
dc.contributor.YOKID TR2990 tr_TR
dc.relation.journal Physica B tr_TR
dc.identifier.volume 515 tr_TR
dc.identifier.issue 1 tr_TR
dc.identifier.pages 8;17
dc.identifier.doi 10.1016/j.physb.2017.03.025
dc.published.type Uluslararası tr_TR


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University of Fırat
23119
Elazığ-Merkez
TURKEY